Dynamics of metal-semiconductor and reverse semiconductor-metal phase transitions in sms thin films induced by mechanical and thermal influences

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The article presents the findings of an investigation of SmS thin films phase transition dynamics, focusing on the semiconductor–metal transition induced by mechanical polishing and the reverse thermally induced metal–semiconductor transition. The results demonstrate that the reverse phase transition occurs during the sample cooling within the temperature range of 408–373 K. The change of phase and element composition of thin films is observed during the aforementioned phase transitions within the surface layer. The findings suggest that SmS thin films can be considered as structures with predictable and required phase transition dynamics, making them promising candidates for engineering functional materials and elements of pressure sensors operating over a wide range.

Sobre autores

I. Volchkov

Shubnikov Institute of Crystallography of the Kurchatov Complex Crystallography and Photonics of the NRC “Kurchatov Institute”

Email: volch2862@gmail.com
Moscow, 119333 Russia

E. Baskakov

Shubnikov Institute of Crystallography of the Kurchatov Complex Crystallography and Photonics of the NRC “Kurchatov Institute”

Moscow, 119333 Russia

D. Khairetdinova

Shubnikov Institute of Crystallography of the Kurchatov Complex Crystallography and Photonics of the NRC “Kurchatov Institute”

Moscow, 119333 Russia

V. Kanevsky

Shubnikov Institute of Crystallography of the Kurchatov Complex Crystallography and Photonics of the NRC “Kurchatov Institute”

Moscow, 119333 Russia

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