The Critical Temperature of Superconducting Aluminum Films

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Abstract

The R(T) dependences of thin superconducting aluminum films deposited on leucosapphire and gallium arsenide substrates by electron beam sputtering and molecular beam epitaxy have been experimen-tally studied. Regardless of morphology, a noticeable increase in the critical temperature of the supercon-ducting transition with a decrease in the film thickness is found. The effect is interpreted as a manifestation of the quantum size effect.

About the authors

K. Yu. Arutyunov

National Research University Higher School of Economics; Kapitsa Institute for Physical Problems, Russian Academy of Sciences

Email: karutyunov@hse.ru
Moscow, 101000 Russia; Moscow, 119334 Russia

E. A. Sedov

National Research University Higher School of Economics; Lebedev Physical Institute, Russian Academy of Sciences

Email: karutyunov@hse.ru
Moscow, 101000 Russia; Moscow, 119991 Russia

V. V. Zavialov

National Research University Higher School of Economics; Kapitsa Institute for Physical Problems, Russian Academy of Sciences

Email: karutyunov@hse.ru
Moscow, 101000 Russia; Moscow, 119334 Russia

A. Stavrinidis

Institute of Electronic Structures and Lasers, Hellenic Foundation for Research and Technology – Hellas (FORTH); Department of Physics, University of Crete

Email: karutyunov@hse.ru
Heraklion, GR-700 13 Greece; Heraklion, GR-700 13 Greece

G. Stavrinidis

Institute of Electronic Structures and Lasers, Hellenic Foundation for Research and Technology – Hellas (FORTH); Department of Physics, University of Crete

Email: karutyunov@hse.ru
Heraklion, GR-700 13 Greece; Heraklion, GR-700 13 Greece

Z. Chatzopoulos

Institute of Electronic Structures and Lasers, Hellenic Foundation for Research and Technology – Hellas (FORTH); Department of Physics, University of Crete

Email: karutyunov@hse.ru
Heraklion, GR-700 13 Greece; Heraklion, GR-700 13 Greece

A. Adikimenakis

Institute of Electronic Structures and Lasers, Hellenic Foundation for Research and Technology – Hellas (FORTH); Department of Physics, University of Crete

Email: karutyunov@hse.ru
Heraklion, GR-700 13 Greece; Heraklion, GR-700 13 Greece

G. Konstantinidis

Institute of Electronic Structures and Lasers, Hellenic Foundation for Research and Technology – Hellas (FORTH); Department of Physics, University of Crete

Email: karutyunov@hse.ru
Heraklion, GR-700 13 Greece; Heraklion, GR-700 13 Greece

N. Florini

Department of Physics, Aristotle University of Thessaloniki, Thessaloniki

Email: karutyunov@hse.ru
Thessaloniki, GR-541 24 Greece

P. Chatzopoulou

Department of Physics, Aristotle University of Thessaloniki

Email: karutyunov@hse.ru
Thessaloniki, GR-541 24 Greece

T. Kehagias

Department of Physics, Aristotle University of Thessaloniki

Email: karutyunov@hse.ru
Thessaloniki, GR-541 24 Greece

G. P. Dimitrakopulos

Department of Physics, Aristotle University of Thessaloniki

Email: karutyunov@hse.ru
Thessaloniki, GR-541 24 Greece

F. Komninou

Department of Physics, Aristotle University of Thessaloniki

Author for correspondence.
Email: karutyunov@hse.ru
Thessaloniki, GR-541 24 Greece

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