作者的详细信息

Шушарин, И. А.

期	栏目	标题	文件
卷 69, 编号 3 (2024)	НАНОЭЛЕКТРОНИКА	Modelling of insulating potential in ultra-thin (42 Å) silicon oxide film
卷 69, 编号 7 (2024)	НАНОЭЛЕКТРОНИКА	Determination of constants and construction of field dependences of parameters of metal-oxide-semiconductor structures with ultrathin layers of silicon oxide based on their experimental high-frequency voltage-capacitance-characteristics